| PART |
Description |
Maker |
| IRG4BC10UD IRG4BC10UDPBF |
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
|
International Rectifier
|
| IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| IRGBC20U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.5A)
|
IRF[International Rectifier]
|
| IRGPH30S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V @Vge=15V Ic=13A)
INSULATED GATE BIPOLAR TRANSISTOR(VCES=1200V, @VGE=15V, IC=13A)
|
IRF[International Rectifier]
|
| IRGPC50M |
INSULATED GATE BIPOLAR TRANSISTOR(VCES=600V, @VGE=15V, IC=35A)
|
IRF
International Rectifier
|
| EN6387B |
Bipolar Transistor -15V, -1.5A, Low VCE(sat), PNP Single MCPH6
|
ON Semiconductor
|
| IRGBC30M-S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| RGBC40M |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V/ @Vge=15V/ Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)
|
IRF[International Rectifier]
|
| EN0676 |
Bipolar Transistor, 15V, 0.7A, Low VCE(sat), NPN Single SPA
|
ON Semiconductor
|
